Transistor Silicium en Couche Mince À Base de Nano-particules de PbS

Résumé du livre

Phototransistor is a novel type of photodetector with special MOSFET structure which can not only convert absorbed light into variation of current but also self-amplify this photocurrent. Especially, with continual advances in quantum dots' (QDs) synthesis, the unique optical-electrical characters reinforce absorption coefficient and electron-hole's generation by easy integrated processes. In this thesis, the infrared PbS QDs with wide infrared (IR) absorption (600-1400 nm) and high efficiency were synthesized to be blended with SU8 gate insulator of Low-Temperature-Poly-Silicon (LTPS) TFTs. Through using this hybrid photo-sensing gate insulator, this LTPS TFTs can still obtain excellent electrical performance such as enough mobility (3.1 cm2/Vs), stable TFT's characters, reasonable on/off ratio (104~105) and subthreshold voltage (3.2 V/Dec). Moreover, under incident IR light's exposure, the high responsivity (1800 A/W) and not negligible responsivity (13 A/W) can be found at 760 nm and 1300 nm respectively. In addition, the photosensitivity also reaches up to 80 and the response time is approximately 30 ms during a pulsed IR signal's scanning. It takes concrete steps forward for the broad application of IR phototransistor.