Fabrication of an Integrated Surface Microelectromechanical Capacitive Pressure Sensor Using an Aluminum Flexible Diaphragm with On-chip Electronics

Résumé du livre

This thesis presents the fabrication and characterization of a surface integrated microelectromechanical capacitive pressure sensor. The capacitor fabrication process uses standard IC processing to produce deformable, parallel-plate air-gap capacitors on the surface of the silicon-substrate and to create PMOS transistors, which form an integrated three-stage ring oscillator. This oscillator can then detect changes in the capacitance of the capacitor by a change in the frequency of its oscillation.